1998 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems: Digest of papers [17-18 September, 1998, Ann Arbor, Michigan, USA]

Cover of: 1998 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems: Digest of papers  |

Published by IEEE .

Written in English

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Subjects:

  • Semiconductors,
  • Silicon,
  • Integrated circuits,
  • Congresses

Book details

The Physical Object
FormatUnknown Binding
Number of Pages219
ID Numbers
Open LibraryOL8083342M
ISBN 100780352890
ISBN 109780780352896

Download 1998 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems: Digest of papers

Get this from a library. Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems: digest of papers: [ September,Ann Arbor, Michigan, USA]. [Sammy Kayali; IEEE Microwave Theory and Techniques Society.;].

Get this from a library. Silicon Monolithic Integrated Circuits in RF Systems, Digest of Papers. Topical Meeting on. [Institute of Electrical and Electronics Engineers;]. Lee, Y. Tretiakov, J.D. Cressler, and A. Joseph, “Design of a Monolithic 30 GHz Branch Line Coupler in SiGe HBT Technology Using 3-D EM Simulation,” Proceedings of the IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, pp.

Macromodeling for RF passives via circuit reduction of VPEC model. Silicon Monolithic Integrated Circuits in RF Systems, Digest of Papers. Topical Meeting on. Cite this publication. J.D. Cressler, “SiGe HBT Reliability Issues Associated with Operation in Extreme Environments,” Proceedings of the IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems.

Alex Margomenos, Dimitrios Peroulis, James P. Becker, and Linda P.B. Katehi, Novel Silicon Micromachined Package for RF MEMS Switches, Silicon Monolithic Integrated Circuits in RF Systems, Digest of Papers. Topical Meeting on, pp.Ann Arbor, MI, SeptemberPage(s): 33 RF-MEMS switching concepts for high power applications.

Silicon Monolithic Integrated Circuits in RF Systems, Digest of Papers. Topical Meeting on. Cite this publication. K.M. Strohm. (Invited Paper) Rhonda Franklin Drayton, “Recent Developments in Porous Silicon Substrates for RF/Microwave Applications,” 5th Topical IEEE Meeting on Silicon Monolithic Integrated Circuits in RF Systems Digest, pp.

Atlanta, GA, September J. Lee, Y. Tretiakov, J. Cressler and A. Joseph, “Design of a Monolithic 30GHz Branch Line Coupler in Sige HBT technology Using 3-D EM Simulation,” Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, pp. – Google ScholarAuthor: Mona Mostafa Hella, Burak Çatli.

A CMOS fully integrated antenna array transmitter with on-chip skew and pulse-delay adjustment for millimeter-wave active imaging Khanh, N. M., Sasaki, M. & Asada, K., IEEE 12th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF - Digest of Papers.

4 p. ( IEEE 12th Topical Meeting on Silicon Monolithic Integrated. Chien, A. Arbabian, A. Niknejad, “A dual-element VNA electronic calibration in CMOS,” IEEE 18th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF),pp.

Erben, H. Schumacher, A. Schuppen, H. Dietrich, J. Arndt, “Application of a Production Ready SiGe HBT Process toand 10 GHz Low Noise MMIC’s”, IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems., September Google ScholarCited by: 1.

Topical Meeting on Silicon Monolithic Integrated Circuits in Rf Systems: Digest of Papers by Topical Meeting on Silicon Monolithic Integrated Circuits in Rf System George E. Ponchak Walter Fisch IEEE Microwave Theory and Techniques Society Paperback | IEEE Standards Office |.

Michael E. Gehm’s profile, publications, research topics, and co-authors. Silicon 1998 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems: Digest of papers book Integrated Circuits in RF Systems, Digest of Papers.

Topical Meeting on: IEL: INDEST: Silicon Monolithic Integrated Circuits in RF Systems, Digest of Papers. Topical Meeting on: IEL: INDEST: Silicon Monolithic Integrated Circuits in RF Systems, Digest of Papers. Topical.

Parametric Resonance Based Piezoelectric Micro-Scale Resonators: Modeling and Theoretical Analysis Pooya Ghaderi, Pooya Ghaderi. Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF ’06), Digest of Papers, San Diego, CA, Jan.

18–20Cited by: 3. [3] Thomas H. Lee, “ The Design of CMOS Radio-Frequency Integrated Cir-cuit,Cambridge University Press, pp [4] ,r and h “A CMOS Low Noise Amplifier at GHz with Active Inductor Load Silicon Monolithic Integrated Circuits in RF Systems, Digest of Papers.

Topical Meeting on, Sept. Proc. of the Third International Workshop on Design of Mixed-Mode Integrated Circuits and Application, Puerto Vallarta, Mexico, July, pp.

Conference Paper Research Publications For a list of publications sinceclick here. Design and Operation of TeraHertz Sources Based on Silicon Germanium Alloys," 4th IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, 9 - 11th April,Grainau, Germany, Silicon RF Digest.

(invited talk) Germany, Silicon RF Assessment of ferromagnetic integrated inductors for Si-technology. Rejaei, M. Vroubel, Y. Zhuang, J.N. Burghartz; Digest of Papers 4th Topical Meeting on Silicon.

Monolithic Integrated Circuits in RF Systems, Aprilnear Garmisch, Southern Germany, pp 9. Ferromagnetic RF Inductors and Transformers for Standard CMOS/BiCMOS. Topical meeting on silicon monolithic integrated circuits in RF systems, Jan Google Scholar 3.

Lin C, Wang C-K () A regenerative semi-dynamic frequency divider for mode-1 MB-OFDM UWB hopping carrier : Mohammad Farazian, Prasad S Gudem, Lawrence E. Larson.

Proceedings of the Sixth Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, San Diego, CA, USA, January 18–20 (), pp. Google Scholar [14]Cited by: In this paper, the advances of the silicon-based millimeter-wave (MMW) monolithic integrated circuits (MMICs) are reported.

The silicon-based technologies for MMW MMICs are briefly introduced. In addition, the current status of the MMW MMICs is surveyed and novel circuit topologies are summarized. Some representative MMW MMICs are illustrated as design examples in the categories of their Cited by: 2.

Megahed, Mohamed“UTSi(R) CMOS Technology for System-on-Chip Solution,” Paper; ; Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems Digest of Papers, IEEE, Piscataway, NJ, p.

Thayyil, N. Joram and F. Ellinger, ‘A 22 to 28 GHz SiGe Superregenerative Amplifier with Integrated Quench Pulse Shaping for FMCW Radar Active Reflector Tags’, Radio & Wireless Week (RWW), IEEE 20th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, San Antonio, USA, pp.January, Radiowave propagation Information on IEEE's Technology Navigator.

Start your Research Here. Radiowave propagation-related Conferences, Publications, and Organizations. The demand for radio frequency (RF) transceivers operating at GHz band has attracted considerable research interest due to the advancement in short range wireless technologies.

The performance of RF transceivers depends heavily on the transmitter and receiver front-ends. The receiver front-end is comprised of a low-noise amplifier (LNA) and a downconversion by: 5.

While there are many books on specific aspects of Si heterostructures, the Silicon Heterostructure Handbook: Materials, Fabrication, Devices, Circuits, and Applications of SiGe and Si Strained-Layer Epitaxy is the first book to bring all aspects together in a single ing broad, comprehensive, and in-depth discussion, this handbook.

Dome-shaped radio-frequency micromechanical resonators were fabricated by utilizing the buckling of a prestressed thin polysilicon film. The enhanced rigidity of the dome structure leads to a significant increase of its resonant frequency compared to a flat plate resonator.

The shell-type geometry of the structure also provides an imbedded actuation by:   What is claimed is: 1. A semiconductor die comprising: an insulating layer; a thin-film semiconductor device layer over the insulating layer; a first body-contacted radio frequency (RF) switch having one of an ON state and an OFF state, and a non-operating state and comprising a first plurality of body-contacted field effect transistor (FET) elements coupled in series, such that each body.

The book presents the design, implementation, and characterization of microwave receiver circuits in CMOS and SiGe bipolar technologies. The applicability of a standard digital μm CMOS technology for realization of a 24 GHz narrow-band radar front-end sensor is investigated.

A configurable wavelength demultiplexer using periodic filter chains. Digest of the IEEE/LEOS Summer Topical Meetings: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Applications/Gallium Nitride Materials, Processing, and Devices (Cat.

NoTH). 10th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF - Digest of Papers, p. Paper in proceedings book: Proc.

of IEEE 12th Topical Meeting onSilicon Monolithic Integrated Circuits in RF Systems - (; ; ) / - - A TEM cell system for in vivo exposure at GHz. Kraemer M., Dragomirescu D. and Plana R., Accurate electromagnetic simulation and measurement of millimetre-wave inductors in bulk CMOS technology, New Orleans, pp, Proceedings of the Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)(), 61– [19] Wang S., Chiang M.J.

and Chang : Mehdi Askari, Hooman Kaabi, Yousef Seifi Kavian. Books. RF MEMs. RF MEMS and Their Applications, by Vijay Varadan, K.J. Vinoy, K.A. Jose, published by John Wiley & Sons, ISBN: X. RF MEMS Theory, Design and Technology, by Gabriel Rebeiz, published by John Wiley & Sons, ISBN: RF MEMS Circuit Design for Wireless Communications, by H.J.

De Los Santos, published by Artech House, Drawn from the comprehensive and well-reviewed Silicon Heterostructure Handbook, this volume examines the design, fabrication, and application of silicon heterostructure transistors. A novel aspect of this book the inclusion of numerous snapshot views of the industrial state-of-the-art for SiGe HBT BiCMOS technology.

The design approaches in present systems based on a regulated flow of power from an energy storage device are not optimal for energy harvesting nodes. This paper briefly reviews the capabilities of the present energy harvesting technologies and some intelligent design approaches based on unregulated supply power to energy harvesting by: 8.

öter, s,"Modeling of distortion in bipolar transistors - A review", in Digest. of SMIC, 5 th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SeptemberAtlanta, Georgia, USA, pp, [74]. 2 INTERCONNECTIONS FOR MMWAVE RF FRONT‐END.

In this section, a development method for easy‐to‐fabricate low‐cost wideband 3D transitions on flexible organic LCP is introduced for mmWave applications such as broadband high‐speed wireless LAN, automotive radar, and imaging systems has recently received great attention as a potential high‐performance microwave medium with Cited by: 2.

Topical Meeting On Silicon Monolithic Integrated Circuits In RF Systems / Digest Of Papers Of Topical Meeting On Silicon Monolithic Integrated Circuits In RF Systems,Refik Sever, Neslin İsmailoğlu, Cağatay Tekmen, Murat Aşkar.

() A High Speed ASIC Implementation of the Rijndael Algorithm.M. Grözing, M. Jutzi, W. Nanz, and M. Berroth, “A 2 Gbit/s um CMOS front-end amplifier for integrated differential photodiodes,” in Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SIRF). Digest of Papers,pp.

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